Beneq Atomic layer deposition system (ALD)
Atomic Layer Deposition (ALD) is a deposition technique which is based on alternating pulsing of two or more precursors. Due to the cyclic nature of ALD, it offers very high thickness control (angstrom resolution), uniformity over large areas and high conformality on non-planar substrates.
Our system is a TFS 200 from Beneq with a reactor that can handle up to 8'' wafers. We currently have the possibility to deposit Al2O3, TiO2 and ZnO using water as the oxygen source. Furthermore the machine has the capability to use O2 and ozone as oxygen sources and a plasma head to do PE-ALD at low temperatures.
We have recently installed a gas cabinet to allow the use of H2S which would allow users to deposit sulphide materials (after agreement with the manager).
|